SINO.SINO is an IDM-type national high-tech enterprise integrating power semiconductor chip design, processing, packaging, testing, and product marketing. Keeping pace with market developments, SINO leverages its years of accumulated technical expertise to drive technological innovation, pioneer emerging fields, and lead the industry frontier. The company operates multiple production lines for power semiconductor discrete devices and IC chips, including 4-inch, 5-inch, 6-inch, and 8-inch wafer fabrication. Annual chip processing capacity reaches 3.22 million wafers, with packaging resources totaling 2.4 billion units and module production capacity of 100 million units per year. The company holds multiple patents in terminal design, process manufacturing, and product design. Its product series utilize core manufacturing technologies such as IGBT and MOS, with domestic leadership in IGBT thin-film process, trench process, lifetime control, and terminal design technologies, achieving advanced international standards. The company primarily manufactures power semiconductor devices and ICs. Its product portfolio now centers on IPM and PM modules, wide bandgap semiconductors, IGBTs, MOSFETs, FRDs, SBDs, SCRs, and BJTs, covering the full spectrum of power semiconductor devices. These products are widely applied in emerging fields such as clean energy, automotive electronics, industrial control, and smart home systems. The company maintains comprehensive management systems, having pioneered certifications including ISO9001 and IATF16949 quality management systems, ISO14001 environmental management system, ISO45001 occupational health and safety management system, QC080000 hazardous substance process management system, as well as certifications for information and industrialization integration management systems, intellectual property management systems, and energy management systems. Key products include: Field-Effect Transistors (FETs)/MOSFETs, Insulated-Gate Bipolar Transistors (IGBTs), Schottky Barrier Diodes (SBDs), Fast Recovery Diodes (FRDs), Silicon Controlled Rectifiers (SCRs), Bipolar Junction Transistors (BJTs), Intelligent Power Modules (IPMs), and High-Voltage Rectifier Diodes (HVRDs).
